PART |
Description |
Maker |
UPD166024T1K UPD166024T1K-E1-AY UPD166024T1K-E2-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation Toshiba, Corp.
|
TPD4123K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4125AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4125K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4124AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD1024S |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
|
TOSHIBA[Toshiba Semiconductor]
|
UPD166019T1F UPD166019T1F-E1-AY |
Single P-Channel High-Side Intelligent Power Device
|
Renesas Electronics Corporation
|
TPD1028BS |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS IC Low-Side Switch for Motors, Solenoids, and Lamp Drivers
|
TOSHIBA[Toshiba Semiconductor]
|
TPD4105AK |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
MIG100Q6CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
MIG400J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|